High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor
| dc.citation.epage | en_US | |
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 100 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chen, Yu-Chun | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Li, Hung-Wei | en_US |
| dc.contributor.author | Chung, Wan-Fang | en_US |
| dc.contributor.author | Wu, Chang-Pei | en_US |
| dc.contributor.author | Chen, Shih-Ching | en_US |
| dc.contributor.author | Lu, Jin | en_US |
| dc.contributor.author | Chen, Yi-Hsien | en_US |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:34Z | |
| dc.date.available | 2014-12-08T15:23:34Z | |
| dc.date.issued | 2012-06-25 | en_US |
| dc.description.abstract | This research presents a sol-gel derived zinc tin oxide thin film transistor (TFT) as a high-stability oxygen sensor. Due to its high sensitivity, oxygen has been traditionally regarded as having a negative influence on the electrical characteristics of zinc-based TFTs; however, TFTs can also act as an oxygen sensor. After illumination with visible light in oxygen-rich ambient, a significant increase in drain current of nearly 10 4 times occurs with fixed gate and drain voltages. It is expected that an optimized method of illumination can help to reset the electrical characteristics or distinguish the on/off state of this reliable oxygen sensor. (C) 2012 American Institute of Physics. [ http://dx.doi.org/10.1063/1.4731773] | en_US |
| dc.identifier.doi | 262908 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/262908 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16470 | |
| dc.identifier.wosnumber | WOS:000305831500067 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor | en_US |
| dc.type | Article | en_US |