A novel Si-B diffusion source for p(+)-poly-Si gate
| dc.citation.epage | 3855 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 3852 | en_US |
| dc.citation.volume | 146 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Kuo, CP | en_US |
| dc.contributor.author | Chen, TP | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:12Z | |
| dc.date.available | 2014-12-08T15:46:12Z | |
| dc.date.issued | 1999-10-01 | en_US |
| dc.description.abstract | In this paper, we report a novel Si-B diffusion source for p(+)-polySi gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can br effectively suppressed using this process. All the electrical properties of the MOS capacitors are significantly improved over the conventional BF2+ or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs. (C) 1999 The Electrochemical Society. S0013-4651(99)03-017-7. All rights reserved. | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31077 | |
| dc.identifier.wosnumber | WOS:000083126400053 | |
| dc.language.iso | en_US | en_US |
| dc.title | A novel Si-B diffusion source for p(+)-poly-Si gate | en_US |
| dc.type | Article | en_US |