High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
| dc.citation.epage | 67 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 64 | en_US |
| dc.citation.volume | 55 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chen, W. B. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Lin, C. W. | en_US |
| dc.contributor.author | Chen, P. C. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:06Z | |
| dc.date.available | 2014-12-08T15:38:06Z | |
| dc.date.issued | 2011-01-01 | en_US |
| dc.description.abstract | We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.sse.2010.09.006 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2010.09.006 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26137 | |
| dc.identifier.wosnumber | WOS:000284795900013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | High-kappa dielectric | en_US |
| dc.subject | Ge | en_US |
| dc.subject | EOT | en_US |
| dc.subject | Mobility | en_US |
| dc.title | High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness | en_US |
| dc.type | Article | en_US |