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Organic thin-film transistors with color filtering functional gate insulators

dc.citation.epageen_US
dc.citation.issue5en_US
dc.citation.volume93en_US
dc.citation.woscount2
dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorCheng, Jung-Anen_US
dc.contributor.authorHuang, Yu-Jenen_US
dc.contributor.authorChang, Hsiao-Fenen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:11:03Z
dc.date.available2014-12-08T15:11:03Z
dc.date.issued2008-08-04en_US
dc.description.abstractWe developed color filtering functional organic thin-film transistors exhibiting both high field-effect mobilities and color-filtering ability. The conventional colorant inks were utilized as the materials for the color filter/dielectric multifunction layers. In order to improve the electrical performance, a high dielectric polymeric insulator, poly(2,2,2-trifluoroethyl methacrylate), was introduced to modify the surface of the dielectric layer. Further, the Commission Internationale de L'Eclairage chromaticity coordinates were (0.64, 0.34), (0.36, 0.54), and (0.14, 0.15) for red, green, and blue devices, respectively, covering 49.2% National Television Systems Committee standard. This work represents one potential example for multifunctional organic electronics. (C) 2008 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2966365en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2966365en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8475
dc.identifier.wosnumberWOS:000258335900079
dc.language.isoen_USen_US
dc.titleOrganic thin-film transistors with color filtering functional gate insulatorsen_US
dc.typeArticleen_US

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