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Design of a resonant-cavity-enhanced photodetector for high-speed applications

dc.citation.epage760en_US
dc.citation.issue5en_US
dc.citation.spage753en_US
dc.citation.volume33en_US
dc.citation.woscount21
dc.contributor.authorTung, HHen_US
dc.contributor.authorLee, CPen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:01:48Z
dc.date.available2014-12-08T15:01:48Z
dc.date.issued1997-05-01en_US
dc.description.abstractWe present a theoretical study of the effects of light field distribution on the frequency response of a resonant-cavity-enhanced p-i-n photodetector, Taking advantage of the flexibility of cavity design, one can tailor the light field distribution in the absorption region, Because of the difference in velocities of the carriers, the speed performances of the detector depend on the field distribution and the cavity design, The results of our work indicate that when the maximum of light field intensity happens near the p(+) edge of the depletion layer, the device shows the best speed performance, The frequency response, the impulse response, and the step response have been calculated for different structures to demonstrate the importance of the field distribution.en_US
dc.identifier.doi10.1109/3.572149en_US
dc.identifier.issn0018-9197en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/3.572149en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/562
dc.identifier.wosnumberWOS:A1997WV96900014
dc.language.isoen_USen_US
dc.subjectfrequency responseen_US
dc.subjectimpulse responseen_US
dc.subjectquantum efficiencyen_US
dc.subjectresonant-cavity-enhanced photodetectoren_US
dc.subjectstep responseen_US
dc.titleDesign of a resonant-cavity-enhanced photodetector for high-speed applicationsen_US
dc.typeArticleen_US

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