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Enhancement of Open-Circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides

dc.citation.epage667en_US
dc.citation.issue5en_US
dc.citation.spage665en_US
dc.citation.volume34en_US
dc.citation.woscount0
dc.contributor.authorLin, Je-Weien_US
dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorWu, Sheng-Weien_US
dc.contributor.authorHseih, Wei-Pingen_US
dc.contributor.authorDu, Chen-Hsuen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:30:41Z
dc.date.available2014-12-08T15:30:41Z
dc.date.issued2013-05-01en_US
dc.description.abstractSurface passivation of solar cells is investigated using CF4 plasma treatment on low-temperature oxides to enhance the open-circuit voltage of the solar cells. Low-temperature oxides grown by a nitric acid solution are treated with the CF4 plasma. Solar cells undergoing this scheme show an improved performance, including low-saturation current density and good quantum efficiency at short wavelengths. Experimental results demonstrate that the CF4 plasma pretreatment on low-temperature oxides can significantly improve the open-circuit voltage, short-circuit current, and fill factor for silicon wafer-based solar cells. This technique is very promising for in-line solar cell manufacturing.en_US
dc.identifier.doi10.1109/LED.2013.2253757en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2253757en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21907
dc.identifier.wosnumberWOS:000318433400031
dc.language.isoen_USen_US
dc.subjectCF4 plasmaen_US
dc.subjectlow-temperature oxidesen_US
dc.subjectopen-circuit voltageen_US
dc.subjectsurface passivationen_US
dc.titleEnhancement of Open-Circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxidesen_US
dc.typeArticleen_US

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