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Epitaxial layer of MgO (001) grown on Si(001)wafer by e-beam evaporation

dc.citation.epageE46en_US
dc.citation.issue1en_US
dc.citation.spageE44en_US
dc.citation.volume304en_US
dc.citation.woscount0
dc.contributor.authorLee, M. D.en_US
dc.contributor.authorLo, C. K.en_US
dc.contributor.authorPeng, T. Y.en_US
dc.contributor.authorYau, K. L.en_US
dc.contributor.authorChen, S. Y.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:15:52Z
dc.date.available2014-12-08T15:15:52Z
dc.date.issued2006-09-01en_US
dc.description.abstractMgO(0 0 1) has been growing successfully on Fe/Pd/Cu/Si(1 0 0) by e-beam evaporation as examined by X-ray diffraction and high resolution transmission microscope. We present the magnetic peculiarity of crystal structure Fe(0 0 1)/Pd(0 0 1)/Cu(0 0 1) on Si(0 0 1) substrate. The magnetic properties of the sample were measured by magneto-optical Kerr effect which shows an in-plane magnetocrystalline anisotropy. (C) 2006 Elsevier B. V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jmmm.2006.02.054en_US
dc.identifier.issn0304-8853en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmmm.2006.02.054en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11843
dc.identifier.wosnumberWOS:000207211700015
dc.language.isoen_USen_US
dc.subjectTextureen_US
dc.subjectMgO (001)en_US
dc.titleEpitaxial layer of MgO (001) grown on Si(001)wafer by e-beam evaporationen_US
dc.typeArticleen_US

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