Characteristics of p-type GaN films doped with isoelectronic indium atoms
| dc.citation.epage | 643 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 637 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Chang, FC | en_US |
| dc.contributor.author | Shen, KC | en_US |
| dc.contributor.author | Chung, HM | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.contributor.author | Chen, WH | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:39Z | |
| dc.date.available | 2014-12-08T15:41:39Z | |
| dc.date.issued | 2002-12-01 | en_US |
| dc.description.abstract | The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 x 10(17) cm(-3) and similar to 1 Omega-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment. | en_US |
| dc.identifier.issn | 0577-9073 | en_US |
| dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28336 | |
| dc.identifier.wosnumber | WOS:000179955600009 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of p-type GaN films doped with isoelectronic indium atoms | en_US |
| dc.type | Article | en_US |