Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2
| dc.citation.epage | 4284 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 4279 | en_US |
| dc.citation.volume | 142 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Liu, CC | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Cheng, KL | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.author | Yew, TR | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:03Z | |
| dc.date.available | 2014-12-08T15:03:03Z | |
| dc.date.issued | 1995-12-01 | en_US |
| dc.description.abstract | SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented. | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1643 | |
| dc.identifier.wosnumber | WOS:A1995TL12000052 | |
| dc.language.iso | en_US | en_US |
| dc.title | Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2 | en_US |
| dc.type | Article | en_US |