Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gap
| dc.citation.epage | 545 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 543 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Kuo, Chia-Hao | en_US |
| dc.contributor.author | Hsu, Chia-Wei | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:32Z | |
| dc.date.available | 2014-12-08T15:30:32Z | |
| dc.date.issued | 2011-07-01 | en_US |
| dc.description.abstract | A novel suspended nanowire (NW) channel thin-film transistor (TFT) with sub-100 nm air gap has been fabricated and characterised. With a simple and low-cost over-etching-time-controlled reactive ion etching technique and a buffered-oxide etch wet-etching process, a suspended NW of 27 nm and an air gap of 10 nm were achieved. The resultant suspended-NW-channel TFTs showed an ultra-low subthreshold swing (52 mV/dec) and considerable hysteresis window (3.7 V). Finally, the impacts of device dimensions on the characteristics of suspended NW TFTs were also investigated. | en_US |
| dc.identifier.doi | 10.1049/mnl.2011.0090 | en_US |
| dc.identifier.issn | 1750-0443 | en_US |
| dc.identifier.journal | MICRO & NANO LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/mnl.2011.0090 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21819 | |
| dc.identifier.wosnumber | WOS:000293512800020 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gap | en_US |
| dc.type | Article | en_US |