Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall
| dc.citation.volume | 8 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Pai, Yung-Min | en_US |
| dc.contributor.author | Lin, Chih-Hao | en_US |
| dc.contributor.author | Lee, Chun-Fu | en_US |
| dc.contributor.author | Lin, Chun-Peng | en_US |
| dc.contributor.author | Chen, Cheng-Huan | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Ye, Zhi-Ting | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 光電工程研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of EO Enginerring | en_US |
| dc.date.accessioned | 2019-04-02T05:59:09Z | |
| dc.date.available | 2019-04-02T05:59:09Z | |
| dc.date.issued | 2018-11-01 | en_US |
| dc.description.abstract | To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall. | en_US |
| dc.identifier.doi | 10.3390/cryst8110420 | en_US |
| dc.identifier.issn | 2073-4352 | en_US |
| dc.identifier.journal | CRYSTALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.3390/cryst8110420 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/148500 | |
| dc.identifier.wosnumber | WOS:000451156400024 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | light emitting diode | en_US |
| dc.subject | deep-ultraviolet light-emitting diode | en_US |
| dc.subject | reflector inclined plane | en_US |
| dc.subject | metal diameter of cavity bottom | en_US |
| dc.title | Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall | en_US |
| dc.type | Article | en_US |