NEW OBSERVATION OF GATE CURRENT IN OFF-STATE MOSFET
| dc.citation.epage | 2120 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 2118 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | CHEN, MJ | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:10Z | |
| dc.date.available | 2014-12-08T15:05:10Z | |
| dc.date.issued | 1991-09-01 | en_US |
| dc.description.abstract | For a gate-controlled p+-n diode having gate-p+ overlap area of 3.7 x 10(-4) cm2, the work reports a new observation of the leakage current through a 235-angstrom gate oxide: the gate current components both due to Fowler-Nordheim electron tunneling through the gate-p+ overlap oxide and due to hot-electron injection have been separately detected. The corresponding gate current has been found to be dominated by Fowler-Nordheim electron tunneling prior to significant surface avalanche impact ionization. This observation is important for device application and for reliability study. | en_US |
| dc.identifier.doi | 10.1109/16.83738 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.83738 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3701 | |
| dc.identifier.wosnumber | WOS:A1991FZ27400022 | |
| dc.language.iso | en_US | en_US |
| dc.title | NEW OBSERVATION OF GATE CURRENT IN OFF-STATE MOSFET | en_US |
| dc.type | Article | en_US |