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Electronic structures and surface states of ZnO finite well structures

dc.citation.epageen_US
dc.citation.issue21en_US
dc.citation.volume41en_US
dc.citation.woscount5
dc.contributor.authorLin, Kuo-Fengen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:10:39Z
dc.date.available2014-12-08T15:10:39Z
dc.date.issued2008-11-07en_US
dc.description.abstractElectronic band structures and surface states were investigated for ZnO finite wells or slabs grown along < 0 0 0 1 > and < 1 - 1 0 0 > directions using tight-binding representation. The dangling bonds on two end-surfaces caused surface bands for different direction grown slabs, of which the wavefunctions tend to localize at the end-surfaces. The increasing splitting of the degenerate surface bands at the Gamma point was observed to decrease with the thickness of the nonpolar [1 - 1 0 0] slab. And the quantum confinement effect is distinctively enhanced by the extra electron field induced in the < 0 0 0 1 > grown finite well with the polar end-surfaces.en_US
dc.identifier.doi10.1088/0022-3727/41/21/215307en_US
dc.identifier.issn0022-3727en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/41/21/215307en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8154
dc.identifier.wosnumberWOS:000260156200036
dc.language.isoen_USen_US
dc.titleElectronic structures and surface states of ZnO finite well structuresen_US
dc.typeArticleen_US

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