<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

Highly Efficient InGaN-based LED with Embedded Cubic Airvoids

Abstract

Highly efficient InGaN-based LEDs with embedded sidewall passivation cubic airvoids made by nanoimprint lithography were demonstrated. The LEDs with embedded airvoids exhibit a 45% enhancement of light output at 20 mA compared with conventional LEDs.

Description

Keywords

Citation

Endorsement

Review

Supplemented By

Referenced By