Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs
| dc.citation.epage | 543 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 538 | en_US |
| dc.citation.volume | 7 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Chen, William Po-Nien | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.author | Goto, Ken-Ichi | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:57Z | |
| dc.date.available | 2014-12-08T15:10:57Z | |
| dc.date.issued | 2008-09-01 | en_US |
| dc.description.abstract | This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport. | en_US |
| dc.identifier.doi | 10.1109/TNANO.2008.2004771 | en_US |
| dc.identifier.issn | 1536-125X | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2008.2004771 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8381 | |
| dc.identifier.wosnumber | WOS:000260463300003 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Coulomb mobility | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | strained silicon | en_US |
| dc.title | Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs | en_US |
| dc.type | Article | en_US |