Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
| dc.citation.epage | 1434 | en_US |
| dc.citation.issue | 14 | en_US |
| dc.citation.spage | 1433 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Chen, YA | en_US |
| dc.contributor.author | Wu, YH | en_US |
| dc.contributor.author | Tsay, WC | en_US |
| dc.contributor.author | Laih, LH | en_US |
| dc.contributor.author | Hong, JW | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:53Z | |
| dc.date.available | 2014-12-08T15:48:53Z | |
| dc.date.issued | 1998-07-09 | en_US |
| dc.description.abstract | To improve the electroluminescence (EL) properties of the nSiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency, a thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p(+)-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300cd/m(2) at an injection current density of 600mA/cm(2), and its EL threshold voltage was 14V. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32507 | |
| dc.identifier.wosnumber | WOS:000075047400048 | |
| dc.language.iso | en_US | en_US |
| dc.title | Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H | en_US |
| dc.type | Article | en_US |