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Electrical Performance Enhancement of AlZn-SnO Thin Film Transistor by Supercritical Fluid Treatment

dc.citation.epage1156en_US
dc.citation.issue9en_US
dc.citation.spage1154en_US
dc.citation.volume34en_US
dc.citation.woscount1
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorWang, Wei-Yaen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:32:31Z
dc.date.available2014-12-08T15:32:31Z
dc.date.issued2013-09-01en_US
dc.description.abstractIn this letter, a low-temperature supercritical fluid (SCF) treatment was employed to enhance the electrical and optical properties of amorphous Al-Zn-Sn-O thin film transistors (a-AZTO TFTs) for flat-panel displays. The carrier mobility and threshold voltage of a-AZTO TFT were improved significantly after SCF process because of the reduction of trap density in the a-AZTO active layer. In addition, the SCF-treated a-AZTO TFT exhibited superior electrical reliability and less degradation after negative gate bias illumination stress. X-ray photoelectron spectroscopy analysis confirmed that the proposed SCF treatment could effectively oxidize a-AZTO film and change the oxidation states of Sn, resulting in the improvement of a-AZTO TFT device characteristics.en_US
dc.identifier.doi10.1109/LED.2013.2272117en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2272117en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22783
dc.identifier.wosnumberWOS:000323982500027
dc.language.isoen_USen_US
dc.subjectAl-Zn-Sn-O thin film transistor (Al-Zn-Sn-O TFT)en_US
dc.subjectsupercritical fluid (SCF)en_US
dc.subjecttransparent amorphous oxide semiconductor (TAOS)en_US
dc.titleElectrical Performance Enhancement of AlZn-SnO Thin Film Transistor by Supercritical Fluid Treatmenten_US
dc.typeArticleen_US

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