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DEPOSITION OF MOLYBDENUM CARBONITRIDE THIN-FILMS FROM MO(NBUT)2(NHBUT)2

dc.citation.epage1624en_US
dc.citation.issue7en_US
dc.citation.spage1622en_US
dc.citation.volume9en_US
dc.citation.woscount6
dc.contributor.authorCHIU, HTen_US
dc.contributor.authorHO, WYen_US
dc.contributor.authorCHUANG, SHen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:03:54Z
dc.date.available2014-12-08T15:03:54Z
dc.date.issued1994-07-01en_US
dc.description.abstractMo(NBut)2(NHBut)2 is used as a single-source precursor to deposit thin films of cubic phase molybdenum carbonitride, MoC(x)N(y), (x: 0.2-0.55, y: 0.1-0.47), by chemical vapor deposition on silicon substrates. in general, the C/Mo ratios increased from 0.2 to 0.55 and the N/Mo ratios decreased from 0.47 to 0.1 with increasing the temperature of deposition from 773 to 923 K. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon atoms were incorporated through beta-methyl activation of the ligands.en_US
dc.identifier.issn0884-2914en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2433
dc.identifier.wosnumberWOS:A1994NU76000003
dc.language.isoen_USen_US
dc.titleDEPOSITION OF MOLYBDENUM CARBONITRIDE THIN-FILMS FROM MO(NBUT)2(NHBUT)2en_US
dc.typeNoteen_US

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