On the enhanced impact ionization in uniaxial strained p-MOSFETs
| dc.citation.epage | 651 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 649 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.author | Kuo, Jack J. -Y. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:45Z | |
| dc.date.available | 2014-12-08T15:13:45Z | |
| dc.date.issued | 2007-07-01 | en_US |
| dc.description.abstract | This letter reports a new mechanism for the enhanced impact-ionization rate (I-sub/I-d) present in short-channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V-dsat), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, V-dsat becomes lower, resulting in the observed V-g-dependent enhancement in I-sub/I-d. This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made. | en_US |
| dc.identifier.doi | 10.1109/LED.2007.900297 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.900297 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10631 | |
| dc.identifier.wosnumber | WOS:000247643900036 | |
| dc.language.iso | en_US | en_US |
| dc.subject | hot-carrier effect | en_US |
| dc.subject | impact ionization | en_US |
| dc.subject | strained-silicon | en_US |
| dc.subject | substrate current | en_US |
| dc.title | On the enhanced impact ionization in uniaxial strained p-MOSFETs | en_US |
| dc.type | Article | en_US |