Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AIGaN/GaN/AIGaN Double Heterostructure

Abstract

Current collapse is a phenomenon that increases the channel resistance during the switching process when the high gate and drain voltages are applied. The effect can be found from GaN-based high electron mobility transistors (HEMTs) and is an obstacle for their applications to power electronics. There have been numerous reports on suppressing current collapse using semiconductor process technologies. In this paper, an enhancement mode (E-mode) AIGaN/GaN/AIGaN double heterostructure was proposed. The current collapse phenomena were studied on devices of E-mode MIS and Schottky gate HEMTs. The results indicate the suppression of current collapse for devices with double heterostructure.