Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes
| dc.citation.epage | 4950 | en_US |
| dc.citation.issue | 6A | en_US |
| dc.citation.spage | 4948 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | Chu, TY | en_US |
| dc.contributor.author | Chen, SY | en_US |
| dc.contributor.author | Chen, JF | en_US |
| dc.contributor.author | Chen, CH | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:16:29Z | |
| dc.date.available | 2014-12-08T15:16:29Z | |
| dc.date.issued | 2006-06-01 | en_US |
| dc.description.abstract | We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indium-tin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq(3)/NPB/WO3/Al was 4.2V and an efficiencies of 4.66cd/A and 1.51 1m/W were achieved at an operational voltage of 8.9 V and a brightness of 940 cd/m(2). In comparison with an ITO/Alq(3) bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8 V in voltage was obtained at 1 mA/cm(2). A charge-transfer dipole model is proposed to rationalize the enhanced electron injection. | en_US |
| dc.identifier.doi | 10.1143/JJAP.45.4948 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.4948 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12190 | |
| dc.identifier.wosnumber | WOS:000238499700013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | inverted organic light emitting device (IOLED) | en_US |
| dc.subject | electron injection | en_US |
| dc.subject | indium tin oxide (ITO) | en_US |
| dc.title | Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes | en_US |
| dc.type | Article | en_US |