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Directed assembly of nano-scale phase variants in highly strained BiFeO3 thin films

dc.citation.epageen_US
dc.citation.issue6en_US
dc.citation.volume112en_US
dc.citation.woscount8
dc.contributor.authorZhou, Jianen_US
dc.contributor.authorTrassin, Morganen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorTamura, Nobumichien_US
dc.contributor.authorKunz, Martinen_US
dc.contributor.authorCheng, Chunen_US
dc.contributor.authorZhang, Jinxingen_US
dc.contributor.authorLiang, Wen-Ien_US
dc.contributor.authorSeidel, Janen_US
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorWu, Junqiaoen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:28:19Z
dc.date.available2014-12-08T15:28:19Z
dc.date.issued2012-09-15en_US
dc.description.abstractThe delicate balance between elastic energy and electrostatic energy in highly strained BiFeO3 (BFO) thin films results in complex mixed-phase patterns, which poses significant challenges for theoretical understanding and complicates the realization of its full potential in magnetoelectric, electromechanical, and photovoltaic devices. In this letter, we explore in-plane electric field induced phase transition in strain engineered BFO thin films and elucidate the mechanism behind the assembly behavior of complex nano-scale phase domains. Our approach enables deterministic control of phase variants with well-defined structures and orientation, paving the way for designing novel data storage devices based on mixed phase BFO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752395]en_US
dc.identifier.doi10.1063/1.4752395en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4752395en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20477
dc.identifier.wosnumberWOS:000309423200100
dc.language.isoen_USen_US
dc.titleDirected assembly of nano-scale phase variants in highly strained BiFeO3 thin filmsen_US
dc.typeArticleen_US

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