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GROWTH-KINETICS OF SILICON THERMAL NITRIDATION

dc.citation.epage1563en_US
dc.citation.issue7en_US
dc.citation.spage1559en_US
dc.citation.volume129en_US
dc.citation.woscount41
dc.contributor.authorWU, CYen_US
dc.contributor.authorKING, CWen_US
dc.contributor.authorLEE, MKen_US
dc.contributor.authorCHEN, CTen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:23Z
dc.date.available2014-12-08T15:06:23Z
dc.date.issued1982en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4955
dc.identifier.wosnumberWOS:A1982NW36700032
dc.language.isoen_USen_US
dc.titleGROWTH-KINETICS OF SILICON THERMAL NITRIDATIONen_US
dc.typeArticleen_US

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