A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION
| dc.citation.epage | 900 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 893 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | CHANG, MC | en_US |
| dc.contributor.author | SHEY, AJ | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:22Z | |
| dc.date.available | 2014-12-08T15:06:22Z | |
| dc.date.issued | 1983 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4938 | |
| dc.identifier.wosnumber | WOS:A1983RJ52000010 | |
| dc.language.iso | en_US | en_US |
| dc.title | A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION | en_US |
| dc.type | Article | en_US |
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