Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors
| dc.citation.volume | 56 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Tso, Chia-Tsung | en_US |
| dc.contributor.author | Liu, Tung-Yu | en_US |
| dc.contributor.author | Pan, Fu-Ming | en_US |
| dc.contributor.author | Sheu, Jeng-Tzong | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 生醫工程研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Institute of Biomedical Engineering | en_US |
| dc.date.accessioned | 2019-04-02T05:59:58Z | |
| dc.date.available | 2019-04-02T05:59:58Z | |
| dc.date.issued | 2017-04-01 | en_US |
| dc.description.abstract | The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (Vth), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both Vth and I-on showed significant doping concentration dependences for JL devices with doping concentrations of 1 x 10(19) and 5 x 10(19) cm(-3). However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 10(20) cm(-3) . (C) 2017 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/JJAP.56.04CD14 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.56.04CD14 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147858 | |
| dc.identifier.wosnumber | WOS:000414623100019 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors | en_US |
| dc.type | Article | en_US |
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