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介電層之化學機械拋光漿料與製程設計---子計畫III:積體電路製程中介電層薄膜之材料特性與化學機械拋光之研究

dc.contributor.author曾偉志en_US
dc.contributor.department交通大學材料科學與工程系zh_TW
dc.date.accessioned2014-12-13T10:37:03Z
dc.date.available2014-12-13T10:37:03Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2216-E006-046zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=418291&docId=74210en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94342
dc.language.isozh_TWen_US
dc.subject化學機械拋光法zh_TW
dc.subject介電質內薄膜zh_TW
dc.subject極大型積體電路zh_TW
dc.subjectChemical-mechanical polishing (CMP)en_US
dc.subjectIntern layer dielectrics (ILD)en_US
dc.subjectUltra large scaling integration (ULSI)en_US
dc.title介電層之化學機械拋光漿料與製程設計---子計畫III:積體電路製程中介電層薄膜之材料特性與化學機械拋光之研究zh_TW
dc.titleMaterials Characteristics and Chemical-Mechanical Polishing Process of Inter-Layer Dielectric Thin Films for Integrated Circuits Fabricationen_US
dc.typePlanen_US

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