Performance improvement after nitridation treatment in HfO2-based resistance random-access memory

Abstract

Nitrogen atoms were introduced into a Pt/HfO2/TiN resistance random-access memory (RRAM) device to improve the resistive switching characteristics induced by a high-pressure nitridation treatment. Compared with a similar untreated HfO2 device, it exhibited superior performance, including a lower forming voltage, a higher on/off ratio, and high-endurance cycle operations. Current-voltage curve-fitting results confirmed the difference of the carrier transport mechanisms after the nitridation treatment. Finally, a reaction model was proposed to explain the improvement of RRAM switching due to the introduction of nitrogen atoms. (C) 2018 The Japan Society of Applied Physics