Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
| dc.citation.epage | en_US | |
| dc.citation.issue | 3 | en_US |
| dc.citation.volume | 101 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Wang, Kai-Wei | en_US |
| dc.contributor.author | Chang, Shu-Wei | en_US |
| dc.contributor.author | Shih, Min-Hsiung | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.department | 光電學院 | zh_TW |
| dc.contributor.department | College of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:53Z | |
| dc.date.available | 2014-12-08T15:23:53Z | |
| dc.date.issued | 1970-01-01 | en_US |
| dc.description.abstract | Type-II GaSb/GaAs coupled quantum rings have exhibited two-order-of-magnitude luminescence enhancement and ten-times elongation of recombination lifetime at room temperature as compared with regular rings. The longer lifetime suggests that a significant amount of electrons are confined in coupled rings rather than simply leaking away. These phenomena indicate that type-II nanostructures can be potentially utilized for room-temperature luminescence and carrier storage applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737443] | en_US |
| dc.identifier.doi | 31906 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/31906 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16626 | |
| dc.identifier.wosnumber | WOS:000306748000027 | |
| dc.language.iso | en_US | en_US |
| dc.title | Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications | en_US |
| dc.type | Article | en_US |