Study of nickel silicide contact on Si/Si1-xGex
| dc.citation.epage | 546 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 544 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 13 | |
| dc.contributor.author | Yang, TH | en_US |
| dc.contributor.author | Luo, GL | en_US |
| dc.contributor.author | Chang, EY | en_US |
| dc.contributor.author | Yang, TY | en_US |
| dc.contributor.author | Tseng, HC | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:40:23Z | |
| dc.date.available | 2014-12-08T15:40:23Z | |
| dc.date.issued | 2003-09-01 | en_US |
| dc.description.abstract | The properties of nickel silicide formed by depositing nickel on Si/P+ - Si1-xGex layer are compared with that of nickel germanosilicide on P+ - Si1-xGex layer formed by depositing Ni directly on P+ - Si1-xGex layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/P+ S Si1-xGex layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on P+ - Si1-xGex layer. In addition, small junction leakage current is also observed for nickel silicide on Si/P+ - Si1-xGex/N - Si diode. In summary, witha Si consuming layer on top of the Si1-xGex, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on Si1-xGex layer. | en_US |
| dc.identifier.doi | 10.1109/LED.2003.815944 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2003.815944 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27569 | |
| dc.identifier.wosnumber | WOS:000184924700006 | |
| dc.language.iso | en_US | en_US |
| dc.subject | agglomerate | en_US |
| dc.subject | Ni | en_US |
| dc.subject | SiGe | en_US |
| dc.subject | silicide | en_US |
| dc.title | Study of nickel silicide contact on Si/Si1-xGex | en_US |
| dc.type | Article | en_US |