Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
| dc.citation.epage | 1132 | en_US |
| dc.citation.issue | 16 | en_US |
| dc.citation.spage | 1130 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Ling, Shih-Chun | en_US |
| dc.contributor.author | Wang, Te-Chung | en_US |
| dc.contributor.author | Chen, Jun-Rong | en_US |
| dc.contributor.author | Liu, Po-Chun | en_US |
| dc.contributor.author | Ko, Tsung-Shine | en_US |
| dc.contributor.author | Chang, Bao-Yao | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.author | Tsay, Jenq-Dar | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:57Z | |
| dc.date.available | 2014-12-08T15:08:57Z | |
| dc.date.issued | 2009-08-15 | en_US |
| dc.description.abstract | In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Omega as 20-mA injected current. Furthermore, the output power was 240 mu W at 100-mA drive current. | en_US |
| dc.identifier.doi | 10.1109/LPT.2009.2023234 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2009.2023234 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6812 | |
| dc.identifier.wosnumber | WOS:000268525900004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | A-plane GaN | en_US |
| dc.subject | electroluminescence (EL) | en_US |
| dc.subject | green light-emitting diodes (LEDs) | en_US |
| dc.subject | polarization degree | en_US |
| dc.title | Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire | en_US |
| dc.type | Article | en_US |