A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
| dc.citation.epage | 139 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 136 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Meng, CC | en_US |
| dc.contributor.author | Chiang, MH | en_US |
| dc.contributor.author | Wu, TH | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:41:23Z | |
| dc.date.available | 2014-12-08T15:41:23Z | |
| dc.date.issued | 2003-01-20 | en_US |
| dc.description.abstract | A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.10699 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.10699 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28158 | |
| dc.identifier.wosnumber | WOS:000180147500022 | |
| dc.language.iso | en_US | en_US |
| dc.subject | CMOS | en_US |
| dc.subject | LNA | en_US |
| dc.subject | MOSFET amplifier | en_US |
| dc.title | A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology | en_US |
| dc.type | Article | en_US |