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製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術發展---低溫薄膜電晶體之相關薄絕緣層之製備研究(I)

dc.contributor.author李崇仁en_US
dc.contributor.department交通大學電子工程系zh_TW
dc.date.accessioned2014-12-13T10:37:18Z
dc.date.available2014-12-13T10:37:18Z
dc.date.issued1999en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC88-2215-E009-054zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=444146&docId=80428en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94527
dc.language.isozh_TWen_US
dc.subject複晶矽zh_TW
dc.subject薄絕緣層zh_TW
dc.subject化學氣相沈積法zh_TW
dc.subject電漿加強化學氣相沈積法zh_TW
dc.subject快速熱處理zh_TW
dc.subjectPolysiliconen_US
dc.subjectThin dielectricen_US
dc.subjectChemical vapor depositionen_US
dc.subjectPlasma-enhance CVDen_US
dc.subjectRapid thermal process (RTP)en_US
dc.title製作低溫(450℃)鋁閘極複晶矽薄膜電晶體之相關技術發展---低溫薄膜電晶體之相關薄絕緣層之製備研究(I)zh_TW
dc.titleThe Study on Thin Dielectrics Preparation Technology for Low Temperature TFTs (I)en_US
dc.typePlanen_US

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