EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES
| dc.citation.epage | 14512 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 14504 | en_US |
| dc.citation.volume | 43 | en_US |
| dc.citation.woscount | 13 | en_US |
| dc.contributor.author | CHUU, DS | en_US |
| dc.contributor.author | LOU, YC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:37:43Z | |
| dc.date.available | 2019-04-03T06:37:43Z | |
| dc.date.issued | 1991-06-15 | en_US |
| dc.description.abstract | The subband structure and the binding energy of an exciton in the GaAs/Al(x)Ga(1-x)As superlattice are studied by a simple approximation method. Both the exciton binding energy and the subband energy are expressed as a function of well width, barrier width, and Al composition. The influence of the effective-mass mismatch is taken into account. The energy spacings between interband or intersubband transitions are calculated and compared with the observed data. Good agreement is obtained. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.43.14504 | en_US |
| dc.identifier.issn | 0163-1829 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.43.14504 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3755 | |
| dc.identifier.wosnumber | WOS:A1991FW75500019 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES | en_US |
| dc.type | Article | en_US |