EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS
| dc.citation.epage | 1622 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1618 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | WANG, TH | en_US |
| dc.contributor.author | HUANG, CM | en_US |
| dc.contributor.author | CHOU, PC | en_US |
| dc.contributor.author | CHUNG, SSS | en_US |
| dc.contributor.author | CHANG, TE | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:47Z | |
| dc.date.available | 2014-12-08T15:03:47Z | |
| dc.date.issued | 1994-09-01 | en_US |
| dc.description.abstract | A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 mum LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V(g) congruent-to 0.5 V(d) in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states. | en_US |
| dc.identifier.doi | 10.1109/16.310115 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.310115 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2333 | |
| dc.identifier.wosnumber | WOS:A1994PE02600018 | |
| dc.language.iso | en_US | en_US |
| dc.title | EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS | en_US |
| dc.type | Article | en_US |