High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
| dc.citation.epage | 386 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 384 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 39 | |
| dc.contributor.author | Hung, BF | en_US |
| dc.contributor.author | Chiang, KC | en_US |
| dc.contributor.author | Huang, CC | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:59Z | |
| dc.date.available | 2014-12-08T15:18:59Z | |
| dc.date.issued | 2005-06-01 | en_US |
| dc.description.abstract | We have integrated a high-κ, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric. | en_US |
| dc.identifier.doi | 10.1109/LED.2005.848622 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.848622 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13639 | |
| dc.identifier.wosnumber | WOS:000229522000014 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | LaAlO3 | en_US |
| dc.subject | thin-film transistors (TFTs) | en_US |
| dc.subject | threshold voltage | en_US |
| dc.title | High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric | en_US |
| dc.type | Article | en_US |