Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment
| dc.citation.epage | 380 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 378 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 14 | |
| dc.contributor.author | Pan, TM | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:01Z | |
| dc.date.available | 2014-12-08T15:45:01Z | |
| dc.date.issued | 2000-08-01 | en_US |
| dc.description.abstract | In this paper, a method to grow robust ultrathin (E-OT = 28 Angstrom) oxynitride film with effective dielectric constant of 5.7 is proposed, Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices. | en_US |
| dc.identifier.doi | 10.1109/55.852956 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.852956 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30377 | |
| dc.identifier.wosnumber | WOS:000088465000003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment | en_US |
| dc.type | Article | en_US |