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PRESSURE EFFECT ON YBA2CU3O7 THIN-FILM GROWTH IN OFF-AXIS RADIO-FREQUENCY MAGNETRON SPUTTERING

dc.citation.epage2419en_US
dc.citation.issue5en_US
dc.citation.spage2412en_US
dc.citation.volume13en_US
dc.citation.woscount7
dc.contributor.authorWU, SCen_US
dc.contributor.authorTSAI, WCen_US
dc.contributor.authorHUANG, CKen_US
dc.contributor.authorHSU, HTen_US
dc.contributor.authorHUANG, CJen_US
dc.contributor.authorTSENG, TYen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:03:11Z
dc.date.available2014-12-08T15:03:11Z
dc.date.issued1995-09-01en_US
dc.description.abstractYBa2CU3O7-x (123) thin films were fabricated on (100) MgO substrates by off-axis single target radio frequency (rf) magnetron sputtering. Our study focused on the effect of chamber pressure on the composition, microstructure, and superconductive properties on transition behavior and T-c, of the grown him studied. An empirical formula was derived to explain the dependence of the deposition rate of various components on the pressure. Next, we compared the transport mechanism of the sputtered particles between the off-axis rf and the on-axis direct current sputtering and determined the processing conditions that result in superconducting films of better quality. According to our findings, growth at higher pressures (>100 mTorr) produces more homogeneous and higher T-c superconducting films. (C) 1995 American Vacuum Society.en_US
dc.identifier.doi10.1116/1.579482en_US
dc.identifier.issn0734-2101en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.579482en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/1748
dc.identifier.wosnumberWOS:A1995RV82800017
dc.language.isoen_USen_US
dc.titlePRESSURE EFFECT ON YBA2CU3O7 THIN-FILM GROWTH IN OFF-AXIS RADIO-FREQUENCY MAGNETRON SPUTTERINGen_US
dc.typeArticleen_US

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