Spin-dependent tunneling in double-barrier semiconductor heterostructures
| dc.citation.epage | 12520 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 12514 | en_US |
| dc.citation.volume | 59 | en_US |
| dc.citation.woscount | 99 | en_US |
| dc.contributor.author | Voskoboynikov, A | en_US |
| dc.contributor.author | Liu, SS | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2019-04-03T06:39:18Z | |
| dc.date.available | 2019-04-03T06:39:18Z | |
| dc.date.issued | 1999-05-15 | en_US |
| dc.description.abstract | Spin-dependent tunneling in symmetric and asymmetric double-barrier semiconductor heterostructures is studied. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions approach an used for a theoretical investigation of the influence of electron spin on the tunneling probability. It is shown that spin-orbit splitting in the dispersion relation for electrons in A(III)B(V) semiconductors can provide the dependence of the tunneling transmission probability on the electron-spin polarization without additional magnetic field. The dependence can be controlled by an external electric field, and may be significant for realistic models of double-barrier semiconductor heterostructures. [S0163-1829(99)02320-6]. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.59.12514 | en_US |
| dc.identifier.issn | 2469-9950 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.59.12514 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31335 | |
| dc.identifier.wosnumber | WOS:000080570800060 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Spin-dependent tunneling in double-barrier semiconductor heterostructures | en_US |
| dc.type | Article | en_US |