Percolation conductivity in hafnium sub-oxides
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 105 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Islamov, D. R. | en_US |
| dc.contributor.author | Gritsenko, V. A. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chin, A. | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2015-07-21T11:20:59Z | |
| dc.date.available | 2015-07-21T11:20:59Z | |
| dc.date.issued | 2014-12-29 | en_US |
| dc.description.abstract | In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfOx, x < 2) leads to percolation charge transport in such dielectrics. Basing on the model of Efros-Shklovskii percolation theory, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2 nm distributed onto non-stoichiometric HfOx. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfOx. (C) 2014 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4905308 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4905308 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124065 | |
| dc.identifier.wosnumber | WOS:000347171300032 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Percolation conductivity in hafnium sub-oxides | en_US |
| dc.type | Article | en_US |