DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY GAAS IMPATT DIODES
| dc.citation.epage | 543 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 541 | en_US |
| dc.citation.volume | ED20 | en_US |
| dc.contributor.author | SU, S | en_US |
| dc.contributor.author | SZE, S | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:13Z | |
| dc.date.available | 2014-12-08T15:07:13Z | |
| dc.date.issued | 1973-01-01 | en_US |
| dc.description.abstract | en_US | |
| dc.identifier.doi | 10.1109/T-ED.1973.17695 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/T-ED.1973.17695 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5692 | |
| dc.language.iso | en_US | en_US |
| dc.title | DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY GAAS IMPATT DIODES | en_US |
| dc.type | Article | en_US |
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