A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
| dc.citation.issue | 2 | en_US |
| dc.citation.volume | 49 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Huang, Jui-Chien | en_US |
| dc.contributor.author | Lin, Yueh-Chin | en_US |
| dc.contributor.author | Tseng, Yu-Ling | en_US |
| dc.contributor.author | Chen, Ke-Shian | en_US |
| dc.contributor.author | Lu, Po-Chin | en_US |
| dc.contributor.author | Lin, Mong-E | en_US |
| dc.contributor.author | Chang, Edward-Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:59Z | |
| dc.date.available | 2014-12-08T15:07:59Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | A Cu-metallized InGaP/GaAs heterojunction bipolar transistor (HBT) using a Pd/Ge/Cu n-type ohmic contact, a Pt/Ti/Pt/Cu p-type ohmic contact, and a Ti/Pt/Cu interconnect has been fabricated for power applications. The 4 x 20 mu m(2) HBT had an output power of 11.25 dBm with a power-added efficiency of 35.1%. After applying current-accelerated stress for 24 h, the current gain remained larger than 125. The device was also annealed at 200 degrees C for 24 h, and showed a slight decrease in output power from 10.06 to 9.83 dBm. The results demonstrated that reliable Cu metallization can be used for fabricating InGaP/GaAs HBTs for power applications. (C) 2010 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/JJAP.49.020215 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.49.020215 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6277 | |
| dc.identifier.wosnumber | WOS:000275665700015 | |
| dc.language.iso | en_US | en_US |
| dc.title | A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications | en_US |
| dc.type | Article | en_US |