Phonon-plasmon interaction in GaN films studied by Raman scattering
| dc.citation.epage | 31 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 27 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Shen, CC | en_US |
| dc.contributor.author | Shu, CK | en_US |
| dc.contributor.author | Lin, HC | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.author | Chen, WH | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:49:23Z | |
| dc.date.available | 2014-12-08T15:49:23Z | |
| dc.date.issued | 1998-02-01 | en_US |
| dc.description.abstract | GaN films of different buffer thicknesses (from 0 to 600 Angstrom) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8 x 10(16) to 5 x 10(17) cm(-3) as determined by Hall measurements. The Raman scattering reveals that the A(1)(LO) mode shifts from 733 to 740 cm(-1) as a result of the phonon-plasmon interaction. | en_US |
| dc.identifier.issn | 0577-9073 | en_US |
| dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32828 | |
| dc.identifier.wosnumber | WOS:000071887500004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | optical properties and materials | en_US |
| dc.subject | infrared and Raman spectra and scattering | en_US |
| dc.title | Phonon-plasmon interaction in GaN films studied by Raman scattering | en_US |
| dc.type | Article | en_US |
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