高透射率嵌附層、唯相移層、極短紫外光反射式圖罩吸收層與緩衝層之材料、電漿蝕刻與性質探討(I)
| dc.contributor.author | 龍文安 | en_US |
| dc.contributor.author | Loong Wen-an | en_US |
| dc.contributor.department | 國立交通大學應用化學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:33:37Z | |
| dc.date.available | 2014-12-13T10:33:37Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC92-2215-E009-066 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=873559&docId=167362 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92165 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高透射率嵌附層、唯相移層、極短紫外光反射式圖罩吸收層與緩衝層之材料、電漿蝕刻與性質探討(I) | zh_TW |
| dc.title | Studies on Materials, Plasma Etchings and Properties of High T% Embedded Layers, Shifter only Layers, Extreme UV Mask's Absorbers and Buffers (I) | en_US |
| dc.type | Plan | en_US |