High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
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10.1016/S0038-1101(03)00144-8
Abstract
A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 mum and a stopband width of about 200 nm is achieved. (C) 2003 Elsevier Ltd. All rights reserved.