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Quasi-nonvolatile storage in Ru-doped Bi12SiO20 crystals by two-wavelength holography

dc.citation.epage19634en_US
dc.citation.issue18en_US
dc.citation.spage19628en_US
dc.citation.volume20en_US
dc.citation.woscount0
dc.contributor.authorMarinova, Veraen_US
dc.contributor.authorLiu, Ren Chungen_US
dc.contributor.authorLin, Shiuan Hueien_US
dc.contributor.authorHsu, Ken Yuhen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:28:03Z
dc.date.available2014-12-08T15:28:03Z
dc.date.issued2012-08-27en_US
dc.description.abstractProlonged read-out process of a hologram recorded at near infrared with simultaneous green light exposure is measured in Ru-doped Bi12SiO20 crystal. The experimental results are confirmed by numerical simulations, suggesting two different traps involved in the space-charge transport mechanism. In addition, quasi-permanent holographic recording of image with fast updating speed by using two-wavelength recording is demonstrated. (C) 2012 Optical Society of Americaen_US
dc.identifier.doi10.1364/OE.20.019628en_US
dc.identifier.issn1094-4087en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.20.019628en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20322
dc.identifier.wosnumberWOS:000308414800003
dc.language.isoen_USen_US
dc.titleQuasi-nonvolatile storage in Ru-doped Bi12SiO20 crystals by two-wavelength holographyen_US
dc.typeArticleen_US

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