Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs
| dc.citation.epage | 1020 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1015 | en_US |
| dc.citation.volume | 39 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chang, SJ | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:33Z | |
| dc.date.available | 2014-12-08T15:02:33Z | |
| dc.date.issued | 1996-07-01 | en_US |
| dc.description.abstract | Transient responses of sidegating effects in GaAs MESFETs are analysed using two-dimensional numerical simulations. Substrates with different trap conditions are considered to clarify the dominant processes in the sidegating transients. Particularly for the electron trap rich substrate (the commonly used undoped semi-insulating GaAs), transient sidegating responses under different bias conditions and the effect of sidegating on the active loads are analyzed to evaluate the effect of sidegating on circuits in operation. Copyright (C) 1996 Elsevier Science Ltd. | en_US |
| dc.identifier.doi | 10.1016/0038-1101(95)00410-6 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(95)00410-6 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1206 | |
| dc.identifier.wosnumber | WOS:A1996UU39400011 | |
| dc.language.iso | en_US | en_US |
| dc.title | Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs | en_US |
| dc.type | Article | en_US |