Wafer bonding by Ni-induced crystallization of amorphous silicon
| dc.citation.epage | 5530 | en_US |
| dc.citation.issue | 9A | en_US |
| dc.citation.spage | 5527 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Chao, CP | en_US |
| dc.contributor.author | Wu, YCS | en_US |
| dc.contributor.author | Lee, TL | en_US |
| dc.contributor.author | Wang, YH | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:40:21Z | |
| dc.date.available | 2014-12-08T15:40:21Z | |
| dc.date.issued | 2003-09-01 | en_US |
| dc.description.abstract | Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC. | en_US |
| dc.identifier.doi | 10.1143/JJAP.42.5527 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.5527 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27549 | |
| dc.identifier.wosnumber | WOS:000185565300025 | |
| dc.language.iso | en_US | en_US |
| dc.subject | wafer bonding | en_US |
| dc.subject | amorphous silicon | en_US |
| dc.subject | metal-induced crystallization of amorphous silicon | en_US |
| dc.subject | nickel and electric field | en_US |
| dc.title | Wafer bonding by Ni-induced crystallization of amorphous silicon | en_US |
| dc.type | Article | en_US |