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Tight-binding theory for coupled photonic crystal waveguides

dc.citation.epage0en_US
dc.citation.issue12en_US
dc.citation.spage0en_US
dc.citation.volume75en_US
dc.citation.woscount21en_US
dc.contributor.authorChien, F. S. -Sen_US
dc.contributor.authorTu, J. B.en_US
dc.contributor.authorHsieh, W. -F.en_US
dc.contributor.authorCheng, S. -C.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.date.accessioned2019-04-03T06:44:39Z
dc.date.available2019-04-03T06:44:39Z
dc.date.issued2007-03-01en_US
dc.description.abstractThe point-defect coupling under the tight-binding approximation is introduced to describe the behavior of dispersion relations of the guided modes in a single photonic crystal waveguide (PCW) and two coupled identical PCWs. The cross-coupling coefficient beta of a point defect in one PCW to the nearest-neighboring (NN) defect in the other PCW causes the split of the dispersion curves, whereas the cross-coupling coefficient gamma to the next-NN defects causes a sinusoidal modulation to the dispersion curves. Furthermore, the sign of beta determines the parities of the fundamental guided modes, which can be either even or odd, and the inequality parallel to beta parallel to <parallel to 2 gamma parallel to is the criterion for the crossing of split dispersion curves. The model developed in this work allows for deriving the coupled-mode equations and the coupling length.en_US
dc.identifier.doi10.1103/PhysRevB.75.125113en_US
dc.identifier.issn1098-0121en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.75.125113en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11038
dc.identifier.wosnumberWOS:000245330200029en_US
dc.language.isoen_USen_US
dc.titleTight-binding theory for coupled photonic crystal waveguidesen_US
dc.typeArticleen_US

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