Analytical Modeling of Proximity and Skin Effects for Millimeter-Wave Inductors Simulation and Design in Nano Si CMOS

Abstract

Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z(m)) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z(in)) and Q measured from mm-wave inductor (L(dc similar to)150pH, Q(max)similar to 17, f(SR)>> 65GHz) fabricated by 65nm CMOS process with 0.9 mu m standard top metal.