Analytical Modeling of Proximity and Skin Effects for Millimeter-Wave Inductors Simulation and Design in Nano Si CMOS
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chan, Ren -Jia | en_US |
| dc.contributor.author | Guo, Jyh-Chyurn | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2015-12-02T03:01:00Z | |
| dc.date.available | 2015-12-02T03:01:00Z | |
| dc.date.issued | 2014-01-01 | en_US |
| dc.description.abstract | Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z(m)) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z(in)) and Q measured from mm-wave inductor (L(dc similar to)150pH, Q(max)similar to 17, f(SR)>> 65GHz) fabricated by 65nm CMOS process with 0.9 mu m standard top metal. | en_US |
| dc.identifier.isbn | 978-1-4799-3869-8 | en_US |
| dc.identifier.issn | 0149-645X | en_US |
| dc.identifier.journal | 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/128660 | |
| dc.identifier.wosnumber | WOS:000363283700234 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Analytical model | en_US |
| dc.subject | proximity | en_US |
| dc.subject | skin | en_US |
| dc.subject | mm-wave inductor | en_US |
| dc.title | Analytical Modeling of Proximity and Skin Effects for Millimeter-Wave Inductors Simulation and Design in Nano Si CMOS | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: